TY - JOUR
T1 - Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors
AU - Nishikawa, Atsushi
AU - Kumakura, Kazuhide
AU - Kasu, Makoto
AU - Makimoto, Toshiki
N1 - Funding Information:
NT is a recipient of the Rio Hortega Grant (Contract 15/00246). This work was supported by grant PI15/02180 from Fondo de Investigaciones Sanitarias (Instituto de Salud Carlos III) from the Spanish Government and CIBERONC.
PY - 2009/5/1
Y1 - 2009/5/1
N2 - We investigated the temperature dependence of the current gain of npn-type GaN/InGaN double-heterojunction bipolar transistors (DHBTs) in the low-temperature region. The current gain increased with decrease in device temperature due to the reduction of the recombination current in the p-type base layer. The current gain reached as high as 5000 at 40 K, which is the highest among nitride-based HBTs. For conventional HBTs made of InP or GaAs, the current gain decreased with decreasing device temperature. However, no reduction of the current gain was observed in this study, suggesting that the minority carrier mobility in the p-type InGaN base layer has negative temperature dependence, presumably because the ionized impurity scattering is relatively unaffected owing to the carrier freezeout and the high activation energy of Mg in the p-InGaN base layer.
AB - We investigated the temperature dependence of the current gain of npn-type GaN/InGaN double-heterojunction bipolar transistors (DHBTs) in the low-temperature region. The current gain increased with decrease in device temperature due to the reduction of the recombination current in the p-type base layer. The current gain reached as high as 5000 at 40 K, which is the highest among nitride-based HBTs. For conventional HBTs made of InP or GaAs, the current gain decreased with decreasing device temperature. However, no reduction of the current gain was observed in this study, suggesting that the minority carrier mobility in the p-type InGaN base layer has negative temperature dependence, presumably because the ionized impurity scattering is relatively unaffected owing to the carrier freezeout and the high activation energy of Mg in the p-InGaN base layer.
KW - A3. Metalorganic vapor phase epitaxy
KW - B1. Nitrides
KW - B3. Bipolar transistors
KW - B3. Heterojunction semiconductor devices
UR - http://www.scopus.com/inward/record.url?scp=65749087467&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65749087467&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2009.01.043
DO - 10.1016/j.jcrysgro.2009.01.043
M3 - Article
AN - SCOPUS:65749087467
SN - 0022-0248
VL - 311
SP - 3000
EP - 3002
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 10
ER -