Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation

K. S. Seol*, H. Hiramatsu, Y. Ohki, D. S. Shin, I. H. Choi, Y. T. Kim

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


Using a KrF or ArF excimer laser as an irradiation photon source, we have succeeded in crystallizing amorphous SrBi2Ta2O9 films at 200-290°C, quite lower temperatures than the conventional crystallization temperature. The crystallization is enhanced when the substrate temperature, irradiation time, or the laser power density is higher.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 1998 Nov 301998 Dec 3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation'. Together they form a unique fingerprint.

Cite this