Low temperature Cu bonding with large tolerance of surface oxidation

Hui Ren; Fengwen Mu; Seongbin Shin; Lei Liu; Guisheng Zou; Tadatomo Suga

doi:10.1063/1.5097382

Low temperature Cu bonding with large tolerance of surface oxidation

Hui Ren, Fengwen Mu^*, Seongbin Shin, Lei Liu, Guisheng Zou, Tadatomo Suga

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis.

Original language	English
Article number	055127
Journal	AIP Advances
Volume	9
Issue number	5
DOIs	https://doi.org/10.1063/1.5097382
Publication status	Published - 2019 May 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.5097382

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abstract = "A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis.",

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T1 - Low temperature Cu bonding with large tolerance of surface oxidation

AU - Ren, Hui

AU - Mu, Fengwen

AU - Shin, Seongbin

AU - Liu, Lei

AU - Zou, Guisheng

AU - Suga, Tadatomo

PY - 2019/5/1

Y1 - 2019/5/1

N2 - A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis.

AB - A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis.

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Low temperature Cu bonding with large tolerance of surface oxidation

Abstract

ASJC Scopus subject areas

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