Low temperature growth of Co2MnSi films on diamond semiconductors by ion-beam assisted sputtering

M. Nishiwaki, K. Ueda, H. Asano

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

High quality Schottky junctions using Co2MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300-400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co2MnSi/diamond interfaces. Only the Co2MnSi films formed at ∼300-400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co2MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co2MnSi films showed clear rectification properties with rectification ratio of more than 107 with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co2MnSi films formed at ∼300-400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

Original languageEnglish
Article number17D719
JournalJournal of Applied Physics
Volume117
Issue number17
DOIs
Publication statusPublished - 2015 May 7
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

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