Low-temperature growth of MgB2 thin films with Tc above 38 K

Kenji Ueda; Toshiki Makimoto

doi:10.1143/JJAP.45.5738

Low-temperature growth of MgB₂ thin films with T_c above 38 K

Kenji Ueda^*, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

MgB₂ thin films with the T_c above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The T_c of 38.2 K was obtained in 1.3-μm-thick MgB ₂ films formed on SiC substrates with AlN buffer layers. The T _c is comparable to those of MgB₂ single crystals and the highest among MgB₂ films fabricated below 500°C. Increase of the film thickness of MgB₂ above 1 μm was the key point to obtain high-quality films at low growth temperature.

Original language	English
Pages (from-to)	5738-5741
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.45.5738
Publication status	Published - 2006 Jul 7
Externally published	Yes

Keywords

Film thickness
Low temperature growth
MBE
MgB films
Nitride buffer

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.5738

Cite this

@article{cb92b9dd309042eb85da91c9648c5461,

title = "Low-temperature growth of MgB2 thin films with Tc above 38 K",

abstract = "MgB2 thin films with the Tc above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The Tc of 38.2 K was obtained in 1.3-μm-thick MgB 2 films formed on SiC substrates with AlN buffer layers. The T c is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500°C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.",

keywords = "Film thickness, Low temperature growth, MBE, MgB films, Nitride buffer",

author = "Kenji Ueda and Toshiki Makimoto",

year = "2006",

month = jul,

day = "7",

doi = "10.1143/JJAP.45.5738",

language = "English",

volume = "45",

pages = "5738--5741",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - Low-temperature growth of MgB2 thin films with Tc above 38 K

AU - Ueda, Kenji

AU - Makimoto, Toshiki

PY - 2006/7/7

Y1 - 2006/7/7

N2 - MgB2 thin films with the Tc above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The Tc of 38.2 K was obtained in 1.3-μm-thick MgB 2 films formed on SiC substrates with AlN buffer layers. The T c is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500°C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.

AB - MgB2 thin films with the Tc above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The Tc of 38.2 K was obtained in 1.3-μm-thick MgB 2 films formed on SiC substrates with AlN buffer layers. The T c is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500°C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.

KW - Film thickness

KW - Low temperature growth

KW - MBE

KW - MgB films

KW - Nitride buffer

UR - http://www.scopus.com/inward/record.url?scp=33746811368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746811368&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.5738

DO - 10.1143/JJAP.45.5738

M3 - Article

AN - SCOPUS:33746811368

SN - 0021-4922

VL - 45

SP - 5738

EP - 5741

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7

ER -