Low-temperature growth of MgB2 thin films with Tc above 38 K

Kenji Ueda*, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


MgB2 thin films with the Tc above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The Tc of 38.2 K was obtained in 1.3-μm-thick MgB 2 films formed on SiC substrates with AlN buffer layers. The T c is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500°C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.

Original languageEnglish
Pages (from-to)5738-5741
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7
Publication statusPublished - 2006 Jul 7
Externally publishedYes


  • Film thickness
  • Low temperature growth
  • MBE
  • MgB films
  • Nitride buffer

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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