Low-temperature oxidation of silicon using UV-light-excited ozone

Aki Tosaka*, Tetsuya Nishiguchi, Hidehiko Nonaka, Shingo Ichimura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ = 248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler-Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.

Original languageEnglish
Pages (from-to)L1144-L1146
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number33-36
Publication statusPublished - 2005 Aug 26
Externally publishedYes


  • Oxidation
  • Ozone
  • Silicon
  • UV light

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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