Low-temperature oxidation of silicon using UV-light-excited ozone

Aki Tosaka; Tetsuya Nishiguchi; Hidehiko Nonaka; Shingo Ichimura

doi:10.1143/JJAP.44.L1144

Low-temperature oxidation of silicon using UV-light-excited ozone

Aki Tosaka^*, Tetsuya Nishiguchi, Hidehiko Nonaka, Shingo Ichimura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ = 248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO₂ film was 5.2nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO₂ in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler-Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.

Original language	English
Pages (from-to)	L1144-L1146
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	33-36
DOIs	https://doi.org/10.1143/JJAP.44.L1144
Publication status	Published - 2005 Aug 26
Externally published	Yes

Keywords

Oxidation
Ozone
Silicon
UV light

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.L1144

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title = "Low-temperature oxidation of silicon using UV-light-excited ozone",

abstract = "An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ = 248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler-Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.",

keywords = "Oxidation, Ozone, Silicon, UV light",

author = "Aki Tosaka and Tetsuya Nishiguchi and Hidehiko Nonaka and Shingo Ichimura",

year = "2005",

month = aug,

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doi = "10.1143/JJAP.44.L1144",

language = "English",

volume = "44",

pages = "L1144--L1146",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Low-temperature oxidation of silicon using UV-light-excited ozone

AU - Tosaka, Aki

AU - Nishiguchi, Tetsuya

AU - Nonaka, Hidehiko

AU - Ichimura, Shingo

PY - 2005/8/26

Y1 - 2005/8/26

N2 - An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ = 248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler-Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.

AB - An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ = 248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler-Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.

KW - Oxidation

KW - Ozone

KW - Silicon

KW - UV light

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DO - 10.1143/JJAP.44.L1144

M3 - Article

AN - SCOPUS:32044473547

SN - 0021-4922

VL - 44

SP - L1144-L1146

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 33-36

ER -

Low-temperature oxidation of silicon using UV-light-excited ozone

Abstract

Keywords

ASJC Scopus subject areas

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