Low temperature oxidation processing with high purity ozone

A. Kurokawa; S. Ichimura; H. J. Kang; D. W. Moon

doi:10.1557/proc-429-269

Low temperature oxidation processing with high purity ozone

A. Kurokawa^*, S. Ichimura, H. J. Kang, D. W. Moon

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

Original language	English
Pages (from-to)	269-274
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	429
DOIs	https://doi.org/10.1557/proc-429-269
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low temperature oxidation processing with high purity ozone",

abstract = "To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.",

author = "A. Kurokawa and S. Ichimura and Kang, {H. J.} and Moon, {D. W.}",

year = "1996",

doi = "10.1557/proc-429-269",

language = "English",

volume = "429",

pages = "269--274",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

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TY - JOUR

T1 - Low temperature oxidation processing with high purity ozone

AU - Kurokawa, A.

AU - Ichimura, S.

AU - Kang, H. J.

AU - Moon, D. W.

PY - 1996

Y1 - 1996

N2 - To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

AB - To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

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UR - http://www.scopus.com/inward/citedby.url?scp=0030409085&partnerID=8YFLogxK

U2 - 10.1557/proc-429-269

DO - 10.1557/proc-429-269

M3 - Conference article

AN - SCOPUS:0030409085

SN - 0272-9172

VL - 429

SP - 269

EP - 274

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Low temperature oxidation processing with high purity ozone

Abstract

ASJC Scopus subject areas

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