Low-temperature processable organic-inorganic hybrid gate dielectrics for solution-based organic field-effect transistors

Takashi Nagase*, Takashi Hamada, Kenji Tomatsu, Saori Yamazaki, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

Organic-inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 °C synthesized by a sol-gel method is employed as a gate dielectric for solution-based organic field-effect transistors. The device exhibits mobility enhancement, compared with those with SiO2 dielectrics, and hysteresis-free, high stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.

Original languageEnglish
Pages (from-to)4706-4710
Number of pages5
JournalAdvanced Materials
Volume22
Issue number42
DOIs
Publication statusPublished - 2010 Nov 9
Externally publishedYes

Keywords

  • Organic Field-Effect Transistors
  • Organic-Inorganic Hybrid Dielectrics
  • Poly(methyl silsesquioxane)
  • Polymer Transistors
  • Printable Gate Dielectrics

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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