Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Masayoshi Esashi; Akira Nakano; Shuichi Shoji; Hiroyuki Hebiguchi

doi:10.1016/0924-4247(90)87062-N

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Masayoshi Esashi^*, Akira Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

Original language	English
Pages (from-to)	931-934
Number of pages	4
Journal	Sensors and Actuators: A. Physical
Volume	23
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(90)87062-N
Publication status	Published - 1990 Apr
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/0924-4247(90)87062-N

Cite this

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title = "Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan",

abstract = "Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.",

author = "Masayoshi Esashi and Akira Nakano and Shuichi Shoji and Hiroyuki Hebiguchi",

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AU - Esashi, Masayoshi

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AU - Shoji, Shuichi

AU - Hebiguchi, Hiroyuki

PY - 1990/4

Y1 - 1990/4

N2 - Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

AB - Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

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U2 - 10.1016/0924-4247(90)87062-N

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JO - Sensors and Actuators A: Physical

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IS - 1-3

ER -

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Abstract

ASJC Scopus subject areas

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