Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass

Masavoshi Esashi; Aklra Nakano; Shuichi Shoji; Hiroyuki Hebiguchi

doi:10.1109/9780470545263.sect11

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass

Masavoshi Esashi, Aklra Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

Original language	English
Title of host publication	Micromechanics and MEMS
Subtitle of host publication	Classic and Seminal Papers to 1990
Publisher	Wiley-IEEE Press
Pages	588-591
Number of pages	4
ISBN (Electronic)	9780470545263
ISBN (Print)	0780310853, 9780780310858
DOIs	https://doi.org/10.1109/9780470545263.sect11
Publication status	Published - 1997 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Computer Science(all)
Engineering(all)
Physics and Astronomy(all)
Energy(all)

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10.1109/9780470545263.sect11

Cite this

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abstract = "Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.",

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AU - Shoji, Shuichi

AU - Hebiguchi, Hiroyuki

PY - 1997/1/1

Y1 - 1997/1/1

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AB - Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

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ER -

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass

Abstract

ASJC Scopus subject areas

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