Abstract
Low temperature specific heats of the GaP, InP, GaAs and InAs compounds were measured over the temperature range 4.5 to 298.15 K using an adiabatic calorimeter. The Debye temperatures were derived from the obtained specific heat data. The curves of Debye temperature as a function of temperature for the GaP, InP, GaAs and InAs compounds exhibit a minimum in the temperature range of 15-30 K and a maximum at somewhat higher temparatures (approximately 130∼180 K). The standard entropies of the GaP, InP, GaAs and InAs compounds determined from the specific heat data were 50.5, 62.1, 64.1 and 75.5 J/(mol·K), respectively. A relation was found between the standard entropy and the cohesive energy. The standard entropies of the III-V compounds decreased linearly with increasing cohesive energy per bond.
| Original language | English |
|---|---|
| Pages (from-to) | 1181-1186 |
| Number of pages | 6 |
| Journal | Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals |
| Volume | 60 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1996 |
| Externally published | Yes |
Keywords
- Adiabatic calorimeter
- Debye temperature
- GaAs
- GaP
- III-V compound semiconductor
- InAs
- InP
- Specific heat
- Standard entropy
ASJC Scopus subject areas
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys
- Materials Chemistry