Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD

Jin Wei*, Hiroshi Kawarada, Jun Ichi Suzuki, Akio Hiraki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×1011cm-3) at ECR condition. Above 1×1011cm-3, using a (CH4+CO2)/H2mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.

Original languageEnglish
Pages (from-to)L1483-L1485
JournalJapanese journal of applied physics
Issue number8
Publication statusPublished - 1990 Aug
Externally publishedYes


  • Cvd
  • Diamond film
  • Double probe
  • Ecr
  • Plasma density

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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