Abstract
At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×1011cm-3) at ECR condition. Above 1×1011cm-3, using a (CH4+CO2)/H2mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.
Original language | English |
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Pages (from-to) | L1483-L1485 |
Journal | Japanese journal of applied physics |
Volume | 29 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1990 Aug |
Externally published | Yes |
Keywords
- Cvd
- Diamond film
- Double probe
- Ecr
- Plasma density
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)