Low-Threshold (3.2 mA per Element) 1.3 μm InGaAsP MQW Laser Array on a p-Type Substrate

S. Yamashita; A. Oka; T. Kawano; T. Tsuchiya; K. Saitoh; K. Uomi; Y. Ono

doi:10.1109/68.157113

Low-Threshold (3.2 mA per Element) 1.3 μm InGaAsP MQW Laser Array on a p-Type Substrate

S. Yamashita, A. Oka, T. Kawano, T. Tsuchiya, K. Saitoh, K. Uomi, Y. Ono

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A low threshold 1.3 μm InGaAsP MQW laser array has been fabricated on a p-type InP substrate considering compatibility with n/p/n type laser-driver circuits. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2 + 0.2 mA (per element) and a slope efficiency of 0.27 ±0.01 W/A is obtained.

Original language	English
Pages (from-to)	954-957
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	4
Issue number	9
DOIs	https://doi.org/10.1109/68.157113
Publication status	Published - 1992 Sept
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.157113

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abstract = "A low threshold 1.3 μm InGaAsP MQW laser array has been fabricated on a p-type InP substrate considering compatibility with n/p/n type laser-driver circuits. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2 + 0.2 mA (per element) and a slope efficiency of 0.27 ±0.01 W/A is obtained.",

author = "S. Yamashita and A. Oka and T. Kawano and T. Tsuchiya and K. Saitoh and K. Uomi and Y. Ono",

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AU - Yamashita, S.

AU - Oka, A.

AU - Kawano, T.

AU - Tsuchiya, T.

AU - Saitoh, K.

AU - Uomi, K.

AU - Ono, Y.

PY - 1992/9

Y1 - 1992/9

N2 - A low threshold 1.3 μm InGaAsP MQW laser array has been fabricated on a p-type InP substrate considering compatibility with n/p/n type laser-driver circuits. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2 + 0.2 mA (per element) and a slope efficiency of 0.27 ±0.01 W/A is obtained.

AB - A low threshold 1.3 μm InGaAsP MQW laser array has been fabricated on a p-type InP substrate considering compatibility with n/p/n type laser-driver circuits. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2 + 0.2 mA (per element) and a slope efficiency of 0.27 ±0.01 W/A is obtained.

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Low-Threshold (3.2 mA per Element) 1.3 μm InGaAsP MQW Laser Array on a p-Type Substrate

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