Low-threshold-current distributed-feedback InGaAsP/InP CW lasers

S. Akiba; K. Utaka; K. Sakai; Y. Matsushima

doi:10.1049/el:19820053

Low-threshold-current distributed-feedback InGaAsP/InP CW lasers

S. Akiba, K. Utaka, K. Sakai, Y. Matsushima

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Distributed-feedback buried-heterostructure InGaAsP/lnP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2-3 kA/cm₂, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.

Original language	English
Pages (from-to)	77-78
Number of pages	2
Journal	Electronics Letters
Volume	18
Issue number	2
DOIs	https://doi.org/10.1049/el:19820053
Publication status	Published - 1982 Jan 21
Externally published	Yes

Keywords

Lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19820053

Cite this

@article{c994a969e1244cc5a0f6521878785cef,

title = "Low-threshold-current distributed-feedback InGaAsP/InP CW lasers",

abstract = "Distributed-feedback buried-heterostructure InGaAsP/lnP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2-3 kA/cm2, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.",

keywords = "Lasers, Semiconductor lasers",

author = "S. Akiba and K. Utaka and K. Sakai and Y. Matsushima",

year = "1982",

month = jan,

day = "21",

doi = "10.1049/el:19820053",

language = "English",

volume = "18",

pages = "77--78",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "2",

}

TY - JOUR

T1 - Low-threshold-current distributed-feedback InGaAsP/InP CW lasers

AU - Akiba, S.

AU - Utaka, K.

AU - Sakai, K.

AU - Matsushima, Y.

PY - 1982/1/21

Y1 - 1982/1/21

N2 - Distributed-feedback buried-heterostructure InGaAsP/lnP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2-3 kA/cm2, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.

AB - Distributed-feedback buried-heterostructure InGaAsP/lnP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2-3 kA/cm2, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.

KW - Lasers

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0019937769&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019937769&partnerID=8YFLogxK

U2 - 10.1049/el:19820053

DO - 10.1049/el:19820053

M3 - Article

AN - SCOPUS:0019937769

SN - 0013-5194

VL - 18

SP - 77

EP - 78

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Low-threshold-current distributed-feedback InGaAsP/InP CW lasers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this