@inproceedings{3192c3fa71bd43dca9d6ded53bea3efb,
title = "LPE growth of low doped n-type 4H-SiC layer on on-axis substrate for power device application",
abstract = "LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.",
keywords = "Basal plane dislocations, LPE, Nitrogen, On-axis, SiC, Solution growth, Solvent, Stacking fault",
author = "R. Hattori and K. Kamei and K. Kusunoki and N. Yashiro and S. Shimosaki",
year = "2009",
doi = "10.4028/www.scientific.net/MSF.615-617.141",
language = "English",
isbn = "9780878493340",
volume = "615 617",
series = "Materials Science Forum",
pages = "141--144",
booktitle = "Materials Science Forum",
note = "7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 ; Conference date: 07-09-2008 Through 11-09-2008",
}