Luminescence spectra from InGaN multiquantum wells heavily doped with Si

T. Deguchi; A. Shikanai; K. Torii; T. Sota; S. Chichibu; S. Nakamura

doi:10.1063/1.121594

Luminescence spectra from InGaN multiquantum wells heavily doped with Si

T. Deguchi^*, A. Shikanai, K. Torii, T. Sota, S. Chichibu, S. Nakamura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

90 Citations (Scopus)

Abstract

A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.

Original language	English
Pages (from-to)	3329-3331
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	25
DOIs	https://doi.org/10.1063/1.121594
Publication status	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.",

author = "T. Deguchi and A. Shikanai and K. Torii and T. Sota and S. Chichibu and S. Nakamura",

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T1 - Luminescence spectra from InGaN multiquantum wells heavily doped with Si

AU - Deguchi, T.

AU - Shikanai, A.

AU - Torii, K.

AU - Sota, T.

AU - Chichibu, S.

AU - Nakamura, S.

PY - 1998

Y1 - 1998

N2 - A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.

AB - A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.

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JF - Applied Physics Letters

IS - 25

ER -

Luminescence spectra from InGaN multiquantum wells heavily doped with Si

Abstract

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