TY - JOUR
T1 - Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs
AU - Onomitsu, Koji
AU - Okabe, Takehito
AU - Makimoto, Toshiki
AU - Saito, Hisao
AU - Ramsteiner, Manfred
AU - Zhu, Hai Jun
AU - Kawaharazuka, Atsushi
AU - Ploog, Klaus
AU - Horikoshi, Yoshiji
PY - 2004/6/15
Y1 - 2004/6/15
N2 - The Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs have been investigated for nitrogen 5-doped samples grown on (001) GaAs substrates. The excitons bound to nitrogen atom pairs produce a number of photoluminescence lines. However, these lines are much fewer than those observed in uniformly nitrogen-doped samples because of the limited spacing between two-dimensionally distributed nitrogen atoms. Among these lines, those appearing at 1.488, 1.476, and 1.428 eV are the most dominant. In this study, the characteristics of these dominant lines are investigated by an applying external field. The observed phenomena are explained by assuming that there is a continuous flow of excitons from a lower to a higher binding energy state under continuous excitation. Each photoluminescence line is found to split into two or more lines without applying an external field. The lines show a further split under a magnetic field and are finally quenched when the magnetic field is increased. The photoluminescence intensity of each line is modulated by the localization of excitons by a magnetic field and by the delocalization by an electric field.
AB - The Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs have been investigated for nitrogen 5-doped samples grown on (001) GaAs substrates. The excitons bound to nitrogen atom pairs produce a number of photoluminescence lines. However, these lines are much fewer than those observed in uniformly nitrogen-doped samples because of the limited spacing between two-dimensionally distributed nitrogen atoms. Among these lines, those appearing at 1.488, 1.476, and 1.428 eV are the most dominant. In this study, the characteristics of these dominant lines are investigated by an applying external field. The observed phenomena are explained by assuming that there is a continuous flow of excitons from a lower to a higher binding energy state under continuous excitation. Each photoluminescence line is found to split into two or more lines without applying an external field. The lines show a further split under a magnetic field and are finally quenched when the magnetic field is increased. The photoluminescence intensity of each line is modulated by the localization of excitons by a magnetic field and by the delocalization by an electric field.
KW - Isoelectronic trap
KW - Magnetic field dependence
KW - Nitrogen atom pair
KW - Photoluminescence
KW - δ doping
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U2 - 10.1143/jjap.43.l756
DO - 10.1143/jjap.43.l756
M3 - Article
AN - SCOPUS:4243153986
SN - 0021-4922
VL - 43
SP - L756-L758
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 6 B
ER -