Magnetic tunnel junctions with a rock-salt-type Mg1-xTixO barrier for low resistance area product

Ikhtiar; S. Kasai; P. H. Cheng; T. Ohkubo; Y. K. Takahashi; T. Furubayashi; K. Hono

doi:10.1063/1.4953783

Magnetic tunnel junctions with a rock-salt-type Mg_1-xTi_xO barrier for low resistance area product

Ikhtiar, S. Kasai, P. H. Cheng, T. Ohkubo, Y. K. Takahashi, T. Furubayashi, K. Hono

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Ti-doped MgO (MTO) barriers were examined for polycrystalline magnetic tunnel junctions (MTJs) in combination with CoFeB ferromagnetic electrodes. The high tunneling magnetoresistance (TMR) ratio up to 240% and 160% was observed for the MTJs with Mg_0.95Ti_0.05O and Mg_0.9Ti_0.1O barriers after annealing at 450 °C. This high TMR ratio implies the presence of coherent tunneling. For a given thickness, MTJs with the MTO barriers were confirmed to have lower resistance-area product (RA) compared to those with the MgO barriers, suggesting the intrinsically lower barrier height of the MTO barriers. The MTO-based MTJs exhibit higher TMR ratio than those of the MgO-based MTJs for the RA range lower than 5 Ω μm² as a consequence of thicker barriers and better wettability. This work has demonstrated the potential of the MTO barriers for low-RA MTJs.

Original language	English
Article number	242416
Journal	Applied Physics Letters
Volume	108
Issue number	24
DOIs	https://doi.org/10.1063/1.4953783
Publication status	Published - 2016 Jun 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{26e540679f014d2a81138c2eb76f2793,

title = "Magnetic tunnel junctions with a rock-salt-type Mg1-xTixO barrier for low resistance area product",

abstract = "Ti-doped MgO (MTO) barriers were examined for polycrystalline magnetic tunnel junctions (MTJs) in combination with CoFeB ferromagnetic electrodes. The high tunneling magnetoresistance (TMR) ratio up to 240% and 160% was observed for the MTJs with Mg0.95Ti0.05O and Mg0.9Ti0.1O barriers after annealing at 450 °C. This high TMR ratio implies the presence of coherent tunneling. For a given thickness, MTJs with the MTO barriers were confirmed to have lower resistance-area product (RA) compared to those with the MgO barriers, suggesting the intrinsically lower barrier height of the MTO barriers. The MTO-based MTJs exhibit higher TMR ratio than those of the MgO-based MTJs for the RA range lower than 5 Ω μm2 as a consequence of thicker barriers and better wettability. This work has demonstrated the potential of the MTO barriers for low-RA MTJs.",

author = "Ikhtiar and S. Kasai and Cheng, {P. H.} and T. Ohkubo and Takahashi, {Y. K.} and T. Furubayashi and K. Hono",

note = "Funding Information: This work was supported by in part by the ImPACT Program of Council for Science, Technology, and Innovation, Japan. Ikhtiar and P.-H. Cheng acknowledge NIMS for the provision of a NIMS junior research assistantship. The authors acknowledge Dr. S. Mitani, Dr. H. Sukegawa, Dr. Y. Sakuraba, and T. Scheike for the fruitful discussion. Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = jun,

day = "13",

doi = "10.1063/1.4953783",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Magnetic tunnel junctions with a rock-salt-type Mg1-xTixO barrier for low resistance area product

AU - Ikhtiar,

AU - Kasai, S.

AU - Cheng, P. H.

AU - Ohkubo, T.

AU - Takahashi, Y. K.

AU - Furubayashi, T.

AU - Hono, K.

N1 - Funding Information: This work was supported by in part by the ImPACT Program of Council for Science, Technology, and Innovation, Japan. Ikhtiar and P.-H. Cheng acknowledge NIMS for the provision of a NIMS junior research assistantship. The authors acknowledge Dr. S. Mitani, Dr. H. Sukegawa, Dr. Y. Sakuraba, and T. Scheike for the fruitful discussion. Publisher Copyright: © 2016 Author(s).

PY - 2016/6/13

Y1 - 2016/6/13

N2 - Ti-doped MgO (MTO) barriers were examined for polycrystalline magnetic tunnel junctions (MTJs) in combination with CoFeB ferromagnetic electrodes. The high tunneling magnetoresistance (TMR) ratio up to 240% and 160% was observed for the MTJs with Mg0.95Ti0.05O and Mg0.9Ti0.1O barriers after annealing at 450 °C. This high TMR ratio implies the presence of coherent tunneling. For a given thickness, MTJs with the MTO barriers were confirmed to have lower resistance-area product (RA) compared to those with the MgO barriers, suggesting the intrinsically lower barrier height of the MTO barriers. The MTO-based MTJs exhibit higher TMR ratio than those of the MgO-based MTJs for the RA range lower than 5 Ω μm2 as a consequence of thicker barriers and better wettability. This work has demonstrated the potential of the MTO barriers for low-RA MTJs.

AB - Ti-doped MgO (MTO) barriers were examined for polycrystalline magnetic tunnel junctions (MTJs) in combination with CoFeB ferromagnetic electrodes. The high tunneling magnetoresistance (TMR) ratio up to 240% and 160% was observed for the MTJs with Mg0.95Ti0.05O and Mg0.9Ti0.1O barriers after annealing at 450 °C. This high TMR ratio implies the presence of coherent tunneling. For a given thickness, MTJs with the MTO barriers were confirmed to have lower resistance-area product (RA) compared to those with the MgO barriers, suggesting the intrinsically lower barrier height of the MTO barriers. The MTO-based MTJs exhibit higher TMR ratio than those of the MgO-based MTJs for the RA range lower than 5 Ω μm2 as a consequence of thicker barriers and better wettability. This work has demonstrated the potential of the MTO barriers for low-RA MTJs.

UR - http://www.scopus.com/inward/record.url?scp=84975458708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975458708&partnerID=8YFLogxK

U2 - 10.1063/1.4953783

DO - 10.1063/1.4953783

M3 - Article

AN - SCOPUS:84975458708

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242416

ER -

Magnetic tunnel junctions with a rock-salt-type Mg_1-xTi_xO barrier for low resistance area product

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