Magnetocrystalline anisotropy for α′-Fe-C and α′-Fe-N films

Migaku Takahashi*, Yukiko Takahashi, Hiroki Shoji

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)

Abstract

Structural and magnetic analyses were made for α′-Fe-C (0-12 at.%C) and α′-Fe-N(0-12 at.%N) films. The results are summarized as follows: 1) epitaxial Fe-C films consisting of an α′-Fe-C single phase with a C content up to 12 at.% can be synthesized on MgO single crystal substrates by sputtering. 2) the change in lattice constants, a and c, as a function of the C content for the α′-Fe-C phase was found to be the same as that of the α′-Fe-N against the N content. 3) the saturation magnetization for the α′-Fe-C films maintains a constant value of about 210 emu/g (≈ 2.1 T) up to 8 at. %C. 4) the easy axis of magnetization of α′-Fe-N corresponds to the c-axis of the bct structure. Even though the α′-Fe-C phase has the same bct structure as the α′-Fe-N, the easy axis of magnetization lies in the (001) plane. 5) the value of the uniaxial magnetocrystalline anisotropy, Ku for α′-Fe-C is - 2 × 106 erg/cm3 independent of the C content, and the magnetocrystalline anisotropy constant, K3 decreases with increasing C content and is about 3 × 105 erg/cm3 at 12 at.%C. 6) the value of the coercive force for the α′-Fe-C films with C content more than 4 at.% is about 2 Oe. From this study, it is found that the α′-Fe-C films with 4-8 at.%C are promising candidates for use as writing head material.

Original languageEnglish
Pages (from-to)2179-2181
Number of pages3
JournalIEEE Transactions on Magnetics
Volume37
Issue number4 I
DOIs
Publication statusPublished - 2001 Jul
Externally publishedYes
Event8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States
Duration: 2001 Jan 72001 Jan 11

Keywords

  • Coercive force
  • Magnetocrystalline anisotropy
  • Saturation magnetization
  • α′-Fe-C

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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