MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Taizo Nakasu; Wei Che Sun; Sotaro Yamashita; Takayuki Aiba; Kosuke Taguri; Masakazu Kobayashi; Toshiaki Asahi; Hiroyoshi Togo

doi:10.1002/pssc.201300582

MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Taizo Nakasu^*, Wei Che Sun, Sotaro Yamashita, Takayuki Aiba, Kosuke Taguri, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

Original language	English
Pages (from-to)	1182-1185
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	11
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.201300582
Publication status	Published - 2014 Jul

Keywords

Heteroepitaxy
Molecular beam epitaxy
Pole figure
Sapphire
ZnTe

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201300582

Cite this

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title = "MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates",

abstract = "ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.",

keywords = "Heteroepitaxy, Molecular beam epitaxy, Pole figure, Sapphire, ZnTe",

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AU - Nakasu, Taizo

AU - Sun, Wei Che

AU - Yamashita, Sotaro

AU - Aiba, Takayuki

AU - Taguri, Kosuke

AU - Kobayashi, Masakazu

AU - Asahi, Toshiaki

AU - Togo, Hiroyoshi

PY - 2014/7

Y1 - 2014/7

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AB - ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

KW - Heteroepitaxy

KW - Molecular beam epitaxy

KW - Pole figure

KW - Sapphire

KW - ZnTe

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MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Abstract

Keywords

ASJC Scopus subject areas

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