MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source

A. W. Jia; T. Yamada; M. Kobayashi; A. Yoshikawa

doi:10.4028/www.scientific.net/msf.182-184.403

MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source

A. W. Jia^*, T. Yamada, M. Kobayashi, A. Yoshikawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.

Original language	English
Pages (from-to)	403-406
Number of pages	4
Journal	Materials Science Forum
Volume	182-184
DOIs	https://doi.org/10.4028/www.scientific.net/msf.182-184.403
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors - Linz, Austria Duration: 1994 Sept 26 → 1994 Sept 28

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source",

abstract = "We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.",

author = "Jia, {A. W.} and T. Yamada and M. Kobayashi and A. Yoshikawa",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors ; Conference date: 26-09-1994 Through 28-09-1994",

year = "1995",

doi = "10.4028/www.scientific.net/msf.182-184.403",

language = "English",

volume = "182-184",

pages = "403--406",

journal = "Materials Science Forum",

issn = "0255-5476",

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TY - JOUR

T1 - MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source

AU - Jia, A. W.

AU - Yamada, T.

AU - Kobayashi, M.

AU - Yoshikawa, A.

PY - 1995

Y1 - 1995

N2 - We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.

AB - We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.

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DO - 10.4028/www.scientific.net/msf.182-184.403

M3 - Conference article

AN - SCOPUS:0029237080

SN - 0255-5476

VL - 182-184

SP - 403

EP - 406

JO - Materials Science Forum

JF - Materials Science Forum

T2 - Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors

Y2 - 26 September 1994 through 28 September 1994

ER -

MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source

Abstract

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