TY - JOUR
T1 - MBE of wide bandgap II-VI compounds
AU - Gunshor, R. L.
AU - Kobayashi, M.
AU - Kolodziejski, L. A.
AU - Otsuka, N.
AU - Nurmikko, A. V.
N1 - Funding Information:
The authors gratefully acknowledge the assistance of A.K. Ramdas, Y.R. Lee, S.M. Durbin, D.L. Mathine, D.R. Menke, J. Han, Sungki 0, D.A. Lubelski, M.J. McLennan, S. Datta, D. Lee, S.K. Chang, N. Nataka, Q. Fu, and M. Hagerott. Research support was provided by the Office of Naval Research under N00012-82-K0563, and N00014-82-K0563, Defense Advanced Research Projects Agency/Office of Naval Research URI Contract N00014-86-K0760, Air Force Office of Scientific Research grant AFOSR83-0237, and National Science Foundation equipment grant ECS-8606241.
PY - 1990/1
Y1 - 1990/1
N2 - A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.
AB - A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.
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U2 - 10.1016/0022-0248(90)90550-5
DO - 10.1016/0022-0248(90)90550-5
M3 - Article
AN - SCOPUS:0025234109
SN - 0022-0248
VL - 99
SP - 390
EP - 398
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -