TY - GEN
T1 - Measurement of antiresonant frequency during DC bias voltage application for analysis of second harmonic response of ScAlN on SMR
AU - Soutome, Takumi
AU - Yanagitani, Takahiko
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by the JST CREST (No. JPM JCR20Q1) and KAKENHI (Grant-in-Aid for Scientific Re search No.16H04356, No.19H02202, and No.18K19037).
Publisher Copyright:
© 2020 IEEE.
PY - 2020/9/7
Y1 - 2020/9/7
N2 - Second harmonic generation (H2) is not desirable for BAW filter applications. Recent BAW filter requires reduction of H2 to achieve high receiver sensitivity. In order to reduce H2, nonlinear parameters of AlN and ScAlN are important because it is widely used in BAW filters. Irieda et al. indicated that second order nonlinear piezoelectric coefficients chi{11}{}-{mathrm{T}} and dielectric chi{02}{}-{mathrm{E}} are dominant for H2 [1], [2]. They showed these nonlinear coefficients chi{11}{}-{mathrm{T}} and chi{02}{}-{mathrm{E}} can be approximately estimated from the change of parallel resonant frequency f{mathrm{p}} and inverse dielectric constant beta-{mathrm{S}} during a DC bias voltage application. In this study, AlN and ScAlN films were grown on Al bottom electrode/Ta2O5/SiO2 Bragg reflector (SMR) by RF magnetron sputtering. f{mathrm{p}} and beta-{mathrm{S}} of AlN/SMR and ScAlN/SMR as a function of the DC bias voltage were measured. Nonlinear parameter chi{11}{}-{mathrm{T}} and chi{02}{}-{mathrm{E}} of films were estimated. chi{11}{}-{mathrm{T}} was decreased with increasing of Sc concentration.
AB - Second harmonic generation (H2) is not desirable for BAW filter applications. Recent BAW filter requires reduction of H2 to achieve high receiver sensitivity. In order to reduce H2, nonlinear parameters of AlN and ScAlN are important because it is widely used in BAW filters. Irieda et al. indicated that second order nonlinear piezoelectric coefficients chi{11}{}-{mathrm{T}} and dielectric chi{02}{}-{mathrm{E}} are dominant for H2 [1], [2]. They showed these nonlinear coefficients chi{11}{}-{mathrm{T}} and chi{02}{}-{mathrm{E}} can be approximately estimated from the change of parallel resonant frequency f{mathrm{p}} and inverse dielectric constant beta-{mathrm{S}} during a DC bias voltage application. In this study, AlN and ScAlN films were grown on Al bottom electrode/Ta2O5/SiO2 Bragg reflector (SMR) by RF magnetron sputtering. f{mathrm{p}} and beta-{mathrm{S}} of AlN/SMR and ScAlN/SMR as a function of the DC bias voltage were measured. Nonlinear parameter chi{11}{}-{mathrm{T}} and chi{02}{}-{mathrm{E}} of films were estimated. chi{11}{}-{mathrm{T}} was decreased with increasing of Sc concentration.
KW - SMR
KW - ScAlN
KW - Second harmonic generation
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U2 - 10.1109/IUS46767.2020.9251804
DO - 10.1109/IUS46767.2020.9251804
M3 - Conference contribution
AN - SCOPUS:85097875879
T3 - IEEE International Ultrasonics Symposium, IUS
BT - IUS 2020 - International Ultrasonics Symposium, Proceedings
PB - IEEE Computer Society
T2 - 2020 IEEE International Ultrasonics Symposium, IUS 2020
Y2 - 7 September 2020 through 11 September 2020
ER -