Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang; Yang Ju; Atsushi Hosoi; Akifumi Fujimoto

doi:10.1007/s00542-012-1512-2

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang, Yang Ju^*, Atsushi Hosoi, Akifumi Fujimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO₂) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO₂) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

Original language	English
Pages (from-to)	1917-1922
Number of pages	6
Journal	Microsystem Technologies
Volume	18
Issue number	11
DOIs	https://doi.org/10.1007/s00542-012-1512-2
Publication status	Published - 2012 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Hardware and Architecture
Electrical and Electronic Engineering

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10.1007/s00542-012-1512-2

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title = "Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe",

abstract = "The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.",

author = "Lan Zhang and Yang Ju and Atsushi Hosoi and Akifumi Fujimoto",

note = "Funding Information: This work was supported by the Japan Society for the Promotion of Science under Grants-in-Aid for Scientific Research (A) 23246024.",

year = "2012",

month = nov,

doi = "10.1007/s00542-012-1512-2",

language = "English",

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journal = "Microsystem Technologies",

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T1 - Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

AU - Zhang, Lan

AU - Ju, Yang

AU - Hosoi, Atsushi

AU - Fujimoto, Akifumi

N1 - Funding Information: This work was supported by the Japan Society for the Promotion of Science under Grants-in-Aid for Scientific Research (A) 23246024.

PY - 2012/11

Y1 - 2012/11

N2 - The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

AB - The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

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JO - Microsystem Technologies

JF - Microsystem Technologies

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ER -

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Abstract

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