Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang; Yang Ju; Atsushi Hosoi; Akifumi Fujimoto

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang, Yang Ju^*, Atsushi Hosoi, Akifumi Fujimoto

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO₂) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO₂) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

Original language	English
Title of host publication	DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Pages	334-338
Number of pages	5
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 - Aix-en-Provence, France Duration: 2011 May 11 → 2011 May 13

Publication series

Name	DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Conference

Conference	2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011
Country/Territory	France
City	Aix-en-Provence
Period	11/5/11 → 11/5/13

ASJC Scopus subject areas

Hardware and Architecture

Cite this

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe. / Zhang, Lan; Ju, Yang; Hosoi, Atsushi et al.
DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2011. p. 334-338 6108014 (DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, L, Ju, Y, Hosoi, A & Fujimoto, A 2011, Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe. in DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS., 6108014, DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, pp. 334-338, 2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011, Aix-en-Provence, France, 11/5/11.

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abstract = "The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.",

author = "Lan Zhang and Yang Ju and Atsushi Hosoi and Akifumi Fujimoto",

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AU - Fujimoto, Akifumi

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N2 - The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

AB - The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

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M3 - Conference contribution

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BT - DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

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Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Abstract

Publication series

Conference

ASJC Scopus subject areas

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