MECHANISM OF BIT LINE MODE SOFT ERROR FOR DRAM.

Mikio Asakura; Yoshio Matsuda; Katsuhiro Tsukamoto; Kazuyasu Fujishima; Tsutomu Yoshihara

MECHANISM OF BIT LINE MODE SOFT ERROR FOR DRAM.

Mikio Asakura^*, Yoshio Matsuda, Katsuhiro Tsukamoto, Kazuyasu Fujishima, Tsutomu Yoshihara

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter

2 Citations (Scopus)

Abstract

This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.

Original language	English
Title of host publication	Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (
Pages	1060-1061
Number of pages	2
Volume	E70
Edition	11
Publication status	Published - 1987 Nov
Externally published	Yes
Event	Pap from the 1987 Natl Conf on Semicond Devices and Mater IEICE - Kumamoto, Jpn Duration: 1987 Nov 1 → 1987 Nov 4

Other

Other	Pap from the 1987 Natl Conf on Semicond Devices and Mater IEICE
City	Kumamoto, Jpn
Period	87/11/1 → 87/11/4

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "MECHANISM OF BIT LINE MODE SOFT ERROR FOR DRAM.",

abstract = "This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.",

author = "Mikio Asakura and Yoshio Matsuda and Katsuhiro Tsukamoto and Kazuyasu Fujishima and Tsutomu Yoshihara",

year = "1987",

month = nov,

language = "English",

volume = "E70",

pages = "1060--1061",

booktitle = "Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (",

edition = "11",

note = "Pap from the 1987 Natl Conf on Semicond Devices and Mater IEICE ; Conference date: 01-11-1987 Through 04-11-1987",

}

TY - CHAP

T1 - MECHANISM OF BIT LINE MODE SOFT ERROR FOR DRAM.

AU - Asakura, Mikio

AU - Matsuda, Yoshio

AU - Tsukamoto, Katsuhiro

AU - Fujishima, Kazuyasu

AU - Yoshihara, Tsutomu

PY - 1987/11

Y1 - 1987/11

N2 - This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.

AB - This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.

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UR - http://www.scopus.com/inward/citedby.url?scp=0023456714&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0023456714

VL - E70

SP - 1060

EP - 1061

BT - Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (

T2 - Pap from the 1987 Natl Conf on Semicond Devices and Mater IEICE

Y2 - 1 November 1987 through 4 November 1987

ER -

MECHANISM OF BIT LINE MODE SOFT ERROR FOR DRAM.

Abstract

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ASJC Scopus subject areas

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