Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

Chengxin Wang; Narihiko Maeda; Masanobu Hiroki; Haruki Yokoyama; Noriyuki Watanabe; Toshiki Makimoto; Takotoino Enoki; Takashi Kobayashi

doi:10.1143/JJAP.45.40

Mechanism of superior suppression effect on gate current leakage in ultrathin Al₂O₃/Si₃N₄ bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

Chengxin Wang^*, Narihiko Maeda, Masanobu Hiroki, Haruki Yokoyama, Noriyuki Watanabe, Toshiki Makimoto, Takotoino Enoki, Takashi Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al₂O₃/Si₃N ₄ bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al₂O₃/Si₃N₄ bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.

Original language	English
Pages (from-to)	40-42
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	1 A
DOIs	https://doi.org/10.1143/JJAP.45.40
Publication status	Published - 2006 Jan 10
Externally published	Yes

Keywords

Alo /SiN dielectric layer
Current tunneling
Field-effect transistor
Gate current leakage
Metal-insulator-semiconductor
Thin surface barrier model

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.40

Cite this

Wang, C., Maeda, N., Hiroki, M., Yokoyama, H., Watanabe, N., Makimoto, T., Enoki, T., & Kobayashi, T. (2006). Mechanism of superior suppression effect on gate current leakage in ultrathin Al₂O₃/Si₃N₄ bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(1 A), 40-42. https://doi.org/10.1143/JJAP.45.40

Mechanism of superior suppression effect on gate current leakage in ultrathin Al₂O₃/Si₃N₄ bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors. / Wang, Chengxin; Maeda, Narihiko; Hiroki, Masanobu et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 1 A, 10.01.2006, p. 40-42.

Research output: Contribution to journal › Article › peer-review

Wang, C, Maeda, N, Hiroki, M, Yokoyama, H, Watanabe, N, Makimoto, T, Enoki, T & Kobayashi, T 2006, 'Mechanism of superior suppression effect on gate current leakage in ultrathin Al₂O₃/Si₃N₄ bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 1 A, pp. 40-42. https://doi.org/10.1143/JJAP.45.40

Wang C, Maeda N, Hiroki M, Yokoyama H, Watanabe N, Makimoto T et al. Mechanism of superior suppression effect on gate current leakage in ultrathin Al₂O₃/Si₃N₄ bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 Jan 10;45(1 A):40-42. doi: 10.1143/JJAP.45.40

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title = "Mechanism of superior suppression effect on gate current leakage in ultrathin Al2O3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors",

abstract = "On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.",

keywords = "Alo /SiN dielectric layer, Current tunneling, Field-effect transistor, Gate current leakage, Metal-insulator-semiconductor, Thin surface barrier model",

author = "Chengxin Wang and Narihiko Maeda and Masanobu Hiroki and Haruki Yokoyama and Noriyuki Watanabe and Toshiki Makimoto and Takotoino Enoki and Takashi Kobayashi",

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AU - Wang, Chengxin

AU - Maeda, Narihiko

AU - Hiroki, Masanobu

AU - Yokoyama, Haruki

AU - Watanabe, Noriyuki

AU - Makimoto, Toshiki

AU - Enoki, Takotoino

AU - Kobayashi, Takashi

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AB - On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate-source bias in nitride-based heterostructure field effect transistors (HFETs) and metal-insulator-semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N 4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.

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KW - Metal-insulator-semiconductor

KW - Thin surface barrier model

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