TY - JOUR
T1 - Mechanisms of several photoluminescence bands in hafnium and zirconium silicates induced by ultraviolet photons
AU - Ito, Toshihide
AU - Kato, Hiromitsu
AU - Ohki, Yoshimichi
N1 - Funding Information:
This work was partly done in the Joint Studies Program (2000–2005) of UVSOR Facility, Institute for Molecular Science, Okazaki, Japan, and was supported by a Grant-in-Aid from Japan Society for the Promotion of Science for Scientific Research (B) (No. 16360160). A High-Tech Research Center Grant from the Ministry of Education, Culture, Sports, Science and Technology of Japan is also appreciated.
PY - 2006/5/1
Y1 - 2006/5/1
N2 - Two photoluminescence (PL) components with peaks around 2.8-3.0 and 3.8 eV were induced in hafnium silicates by the irradiation of synchrotron radiation photons at 8.0 eV, while two similar ones were induced in zirconium silicates around 2.7-3.0 and 3.8 eV. By examining PL excitation spectra, PL decay characteristics, and vacuum-ultraviolet absorption spectra, it is assumed that the origin of the PL component around 2.7 (2.8) -3.0 eV is the same as that of the PL component around 2.7-2.9 eV observed in hafnia and zirconia. In the band gaps of hafnium silicates, zirconium silicates, hafnia, and zirconia, luminescent centers responsible for the PL components around 2.7 (2.8) -2.9 (3.0) eV have their respective upper and lower states with a certain constant energy difference that does not change by the hafnium or zirconium content. Electrons (or holes) excited by ultraviolet photons to tail states at the band edges first relax to the upper state of the luminescent centers, and then they are deexcited to the lower state, which induces the PL components.
AB - Two photoluminescence (PL) components with peaks around 2.8-3.0 and 3.8 eV were induced in hafnium silicates by the irradiation of synchrotron radiation photons at 8.0 eV, while two similar ones were induced in zirconium silicates around 2.7-3.0 and 3.8 eV. By examining PL excitation spectra, PL decay characteristics, and vacuum-ultraviolet absorption spectra, it is assumed that the origin of the PL component around 2.7 (2.8) -3.0 eV is the same as that of the PL component around 2.7-2.9 eV observed in hafnia and zirconia. In the band gaps of hafnium silicates, zirconium silicates, hafnia, and zirconia, luminescent centers responsible for the PL components around 2.7 (2.8) -2.9 (3.0) eV have their respective upper and lower states with a certain constant energy difference that does not change by the hafnium or zirconium content. Electrons (or holes) excited by ultraviolet photons to tail states at the band edges first relax to the upper state of the luminescent centers, and then they are deexcited to the lower state, which induces the PL components.
UR - http://www.scopus.com/inward/record.url?scp=33646867666&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646867666&partnerID=8YFLogxK
U2 - 10.1063/1.2199977
DO - 10.1063/1.2199977
M3 - Article
AN - SCOPUS:33646867666
SN - 0021-8979
VL - 99
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 9
M1 - 094106
ER -