Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

Tatsurou Hiraki; Takuma Aihara; Koji Takeda; Takuro Fujii; Takaaki Kakitsuka; Tai Tsuchizawa; Hiroshi Fukuda; Shinji Matsuo

doi:10.1364/OE.27.018612

Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

Tatsurou Hiraki^*, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a V_πL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.

Original language	English
Pages (from-to)	18612-18619
Number of pages	8
Journal	Optics Express
Volume	27
Issue number	13
DOIs	https://doi.org/10.1364/OE.27.018612
Publication status	Published - 2019
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform",

abstract = "A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.",

author = "Tatsurou Hiraki and Takuma Aihara and Koji Takeda and Takuro Fujii and Takaaki Kakitsuka and Tai Tsuchizawa and Hiroshi Fukuda and Shinji Matsuo",

note = "Publisher Copyright: {\textcopyright} 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.",

year = "2019",

doi = "10.1364/OE.27.018612",

language = "English",

volume = "27",

pages = "18612--18619",

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T1 - Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

AU - Hiraki, Tatsurou

AU - Aihara, Takuma

AU - Takeda, Koji

AU - Fujii, Takuro

AU - Kakitsuka, Takaaki

AU - Tsuchizawa, Tai

AU - Fukuda, Hiroshi

AU - Matsuo, Shinji

PY - 2019

Y1 - 2019

N2 - A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.

AB - A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-μm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.

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JO - Optics Express

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Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform

Abstract

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