Memory effect of diamond in-plane-gated field-effect transistors

Yu Sumikawa; Tokishige Banno; Kensaku Kobayashi; Yutaka Itoh; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1063/1.1767272

Memory effect of diamond in-plane-gated field-effect transistors

Yu Sumikawa, Tokishige Banno, Kensaku Kobayashi, Yutaka Itoh, Hitoshi Umezawa, Hiroshi Kawarada

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.

Original language	English
Pages (from-to)	139-141
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	1
DOIs	https://doi.org/10.1063/1.1767272
Publication status	Published - 2004 Jul 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1767272

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abstract = "The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.",

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AU - Sumikawa, Yu

AU - Banno, Tokishige

AU - Kobayashi, Kensaku

AU - Itoh, Yutaka

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

PY - 2004/7/5

Y1 - 2004/7/5

N2 - The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.

AB - The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.

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Memory effect of diamond in-plane-gated field-effect transistors

Abstract

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