Memory effect of diamond in-plane-gated field-effect transistors

Yu Sumikawa, Tokishige Banno, Kensaku Kobayashi, Yutaka Itoh, Hitoshi Umezawa, Hiroshi Kawarada

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The analysis of memory effect of diamond in-plane-gated field effect transistors (IPGFETs) was carried out. This was observed in hydrogen terminated and oxygen terminated diamond surfaces. The hysteresis characteristics were observed under the light irradiation at room temperature in the diamond IPGFETs. It was concluded that the carrier trap sites on the insulating part of IPGFETs caused the hysteresis characteristics.

Original languageEnglish
Pages (from-to)139-141
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2004 Jul 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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