Memristive operations demonstrated by gap-type atomic switches

Tsuyoshi Hasegawa*, Alpana Nayak, Takeo Ohno, Kazuya Terabe, Tohru Tsuruoka, James K. Gimzewski, Masakazu Aono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


We demonstrate memristive operations using gap-type Ag2S atomic switches, in which the growth and shrinkage of an Ag protrusion are controlled by using solid-electrochemical reactions. In addition to conventional memristive operations such as those proposed and demonstrated by resistive random-access memories (ReRAMs) using metal oxide compounds, gap-type Ag2S atomic switches also show new types of memristive operations by storing information from input signals without changing their output until a sufficient number of signals are inputted. The new types of memristive operations resemble the learning process seen in neuroplasticity, where changes occur in the organization of the human brain as a result of experience.

Original languageEnglish
Pages (from-to)811-815
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Issue number4
Publication statusPublished - 2011 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science


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