Metalorganic vapor phase epitaxy growth of InGaP using tertiarybutylphosphine and its application to selective regrowth of current blocking layers of laser diodes

The selective regrowth of InGaP on patterned GaAs substrates was performed by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylphosphine (TBP) as the phosphorus source. Photoluminescence properties and doping characteristics of InGaP layers grown using TBP were investigated. The selective regrowth of InGaP layers was utilized to form current blocking layers for InGaAs/GaAs/InGaP separate confinement heterostructure strained double quantum well lasers. The characteristics of the buried heterostructure lasers, such as the far-field pattern of the output light and the output power versus current characteristics, proved that the current blocking layers grown by MOVPE using TBP fulfilled their function.