TY - JOUR
T1 - Micro-photoluminescence study on defects induced by ion microbeam in silica glass
AU - Murai, Masato
AU - Nishikawa, Hiroyuki
AU - Nakamura, Tomoharu
AU - Aiba, Hirohiko
AU - Ohki, Yoshimichi
AU - Oikawa, Masakazu
AU - Sato, Takahiro
AU - Kamiya, Tomihiro
N1 - Funding Information:
This work was performed under the JAEA-Cooperation Research Program at TIARA and is partly supported by a Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (No. 17310085) and by ‘Academic Frontier’ Project of the Ministry of Education, Culture, Sports, Science and Technology, Japan.
PY - 2007/4/1
Y1 - 2007/4/1
N2 - We have evaluated the irradiation effects by ion microbeam on silica glass for various ion species by means of a micro-photoluminescence technique. Defect generation and refractive index change were observed for silica at the area of 10 μm × 50 μm scanned by ion microbeam of H+, He+, N4+, C4+, O4+, and Si5+ with energy from 1.7 to 18 MeV. The μ-PL spectroscopy measurements were performed along the side surface perpendicular to the microbeam irradiated surface. Based on the comparison with a result of SRIM (stopping and range of ions in matter) simulation, the defect generation mechanism was discussed in terms of the energy deposition processes due to electronic and nuclear stopping powers. We conclude that the electronic stopping power is responsible for the defect generation at the track of ions. The effect of the nuclear stopping power is also not negligibly small at the end of range.
AB - We have evaluated the irradiation effects by ion microbeam on silica glass for various ion species by means of a micro-photoluminescence technique. Defect generation and refractive index change were observed for silica at the area of 10 μm × 50 μm scanned by ion microbeam of H+, He+, N4+, C4+, O4+, and Si5+ with energy from 1.7 to 18 MeV. The μ-PL spectroscopy measurements were performed along the side surface perpendicular to the microbeam irradiated surface. Based on the comparison with a result of SRIM (stopping and range of ions in matter) simulation, the defect generation mechanism was discussed in terms of the energy deposition processes due to electronic and nuclear stopping powers. We conclude that the electronic stopping power is responsible for the defect generation at the track of ions. The effect of the nuclear stopping power is also not negligibly small at the end of range.
KW - Luminescence
KW - Optical properties
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U2 - 10.1016/j.jnoncrysol.2006.10.053
DO - 10.1016/j.jnoncrysol.2006.10.053
M3 - Article
AN - SCOPUS:33847388339
SN - 0022-3093
VL - 353
SP - 537
EP - 541
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 5-7
ER -