Micro-Raman spectroscopy on pentacene thin-film transistors

Yoshinobu Hosoi; Daniel Martinez Deyra; Kazuhiro Nakajima; Yukio Furukawa

doi:10.1080/15421400802331083

Micro-Raman spectroscopy on pentacene thin-film transistors

Yoshinobu Hosoi^*, Daniel Martinez Deyra, Kazuhiro Nakajima, Yukio Furukawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Molecular orientation in pentacene films and thin-film transistors has been studied by micro-Raman spectroscopy. We have found that the relative intensity of the 1596-cm-1 band (B3g) is sensitive to the molecular orientation. The standing orientation was observed for the films formed on the bare and hexamethyldisilazane (HMDS)-modified SiO2 surfaces and the Au surfaces modified with self-assembled monolayers (SAMs), whereas the lying orientation for the films on the bare Au surface. We have explicitly demonstrated the differences of the molecular orientation in the films on SiO2 dielectric layers and Au electrodes in the devices by mapping measurements.

Original language	English
Pages (from-to)	317-323
Number of pages	7
Journal	Molecular Crystals and Liquid Crystals
Volume	491
DOIs	https://doi.org/10.1080/15421400802331083
Publication status	Published - 2008

Keywords

Organic thin-film transistor
Pentacene
Raman spectroscopy

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1080/15421400802331083

Cite this

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title = "Micro-Raman spectroscopy on pentacene thin-film transistors",

abstract = "Molecular orientation in pentacene films and thin-film transistors has been studied by micro-Raman spectroscopy. We have found that the relative intensity of the 1596-cm-1 band (B3g) is sensitive to the molecular orientation. The standing orientation was observed for the films formed on the bare and hexamethyldisilazane (HMDS)-modified SiO2 surfaces and the Au surfaces modified with self-assembled monolayers (SAMs), whereas the lying orientation for the films on the bare Au surface. We have explicitly demonstrated the differences of the molecular orientation in the films on SiO2 dielectric layers and Au electrodes in the devices by mapping measurements.",

keywords = "Organic thin-film transistor, Pentacene, Raman spectroscopy",

author = "Yoshinobu Hosoi and Deyra, {Daniel Martinez} and Kazuhiro Nakajima and Yukio Furukawa",

note = "Funding Information: This work was supported by a Grant-in-Aid for Young Scientists (B) (18750170) from JSPS and the 21COE {\textquoteleft}{\textquoteleft}Practical Nano-Chemistry{\textquoteright}{\textquoteright} from MEXT. We thank Renishaw plc for the mapping measurements.",

year = "2008",

doi = "10.1080/15421400802331083",

language = "English",

volume = "491",

pages = "317--323",

journal = "Molecular Crystals and Liquid Crystals",

issn = "1542-1406",

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T1 - Micro-Raman spectroscopy on pentacene thin-film transistors

AU - Hosoi, Yoshinobu

AU - Deyra, Daniel Martinez

AU - Nakajima, Kazuhiro

AU - Furukawa, Yukio

N1 - Funding Information: This work was supported by a Grant-in-Aid for Young Scientists (B) (18750170) from JSPS and the 21COE ‘‘Practical Nano-Chemistry’’ from MEXT. We thank Renishaw plc for the mapping measurements.

PY - 2008

Y1 - 2008

N2 - Molecular orientation in pentacene films and thin-film transistors has been studied by micro-Raman spectroscopy. We have found that the relative intensity of the 1596-cm-1 band (B3g) is sensitive to the molecular orientation. The standing orientation was observed for the films formed on the bare and hexamethyldisilazane (HMDS)-modified SiO2 surfaces and the Au surfaces modified with self-assembled monolayers (SAMs), whereas the lying orientation for the films on the bare Au surface. We have explicitly demonstrated the differences of the molecular orientation in the films on SiO2 dielectric layers and Au electrodes in the devices by mapping measurements.

AB - Molecular orientation in pentacene films and thin-film transistors has been studied by micro-Raman spectroscopy. We have found that the relative intensity of the 1596-cm-1 band (B3g) is sensitive to the molecular orientation. The standing orientation was observed for the films formed on the bare and hexamethyldisilazane (HMDS)-modified SiO2 surfaces and the Au surfaces modified with self-assembled monolayers (SAMs), whereas the lying orientation for the films on the bare Au surface. We have explicitly demonstrated the differences of the molecular orientation in the films on SiO2 dielectric layers and Au electrodes in the devices by mapping measurements.

KW - Organic thin-film transistor

KW - Pentacene

KW - Raman spectroscopy

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EP - 323

JO - Molecular Crystals and Liquid Crystals

JF - Molecular Crystals and Liquid Crystals

ER -

Micro-Raman spectroscopy on pentacene thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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