Micro/nano fabrication of nanopores formed through SiN

D. S. Lee*, H. W. Song, W. I. Jang, S. Shoji, M. Y. Jung

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


This paper reports a novel micro/nano fabrication method for mass production of low-stressed silicon nitride (SiN) membrane nanopores with the precisely size-controlled 30 nm in diameter using an anisotropic reactive ion etching (ARIE) and nano-imprinting method, while maintaining compatibility with CMOS IC processes. Our method differs from that of Striemer group [1] in the specific membrane material, and Hien group [2] in the specific fabrication protocols. Micromachining protocols facilitate the accomplishing nanostructures to be used for separation of collections of particles. However, membrane fragility and complex fabrication prevents the use of ultrathin membranes for molecular separations. Here, we report a novel, simple and robust micro/nano fabrication method of strong SiN nanosieve membrane with the small, precise, and uniform nano-sized pore structures with a diameter of 30 nm.

Original languageEnglish
Pages (from-to)884-887
Number of pages4
JournalProcedia Engineering
Publication statusPublished - 2011
Event25th Eurosensors Conference - Athens, Greece
Duration: 2011 Sept 42011 Sept 7


  • ARIE
  • E-beam Resist
  • Low stressed SiN
  • Mass production
  • Micro/nano fabrication
  • Nanopore

ASJC Scopus subject areas

  • Engineering(all)


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