Microscopic characterization of printable low-voltage electrolyte-gated transistors by electron spin resonance

Kazuhiro Marumoto*, Masaki Tsuji, Yohei Yomogida, Taishi Takenobu, Yoshihiro Iwasa

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    We have investigated the microscopic properties of printable low-voltage electrolyte-gated transistors using electron spin resonance (ESR). The utilized devices were ion gel-gated regioregular poly(3-hexylthiophene) (RR-P3HT) thin-film transistors. We performed simultaneous mesurements of field-induced ESR (FI-ESR) and device characteristics using the same device. Clear FI-ESR signals due to hole carriers (positive polarons) were observed by applying a negative gate voltage. The anisotropy of the ESR linewidth indicated two-dimensional magnetic interactions between high density charges. The magnetism of the majority of hole carriers at a high charge density was found to be nonmagnetic from the simultaneous measurements of FI-ESR and transfer characteristics. The anisotropy of the g value of the ESR signal at a high gate voltage indicated the disordered molecular orientation of RR-P3HT where paramagnetic holes exist. These results provide insight into the charge transport mechanism of RR-P3HT polymer semiconductors with high charge densities.

    Original languageEnglish
    Article number05DC05
    JournalJapanese Journal of Applied Physics
    Issue number5 PART 2
    Publication statusPublished - 2013 May

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


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