Abstract
The gas pressure sintering of silicon nitride with 5% MgO as an additive was performed under 10 atm N//2 at 1450 to 1900 degree C. Maximum density of 95% of theoretical value, 3. 19 g/cm**3, was obtained at 1800 degree C. The densification was due to liquid phase sintering and divided into two processes, rearrangement and solution-precipitation. Microstructural studies of cleavages and etched ones revealed that the densification was mainly attributed to rearrangement at lower temperatures than 1500 degree C and solution-precipitation at higher temperatures.
| Original language | English |
|---|---|
| Title of host publication | J Ceram Soc Jpn |
| Pages | 356-360 |
| Number of pages | 5 |
| Volume | 84 |
| Edition | 8 |
| Publication status | Published - 1976 |
ASJC Scopus subject areas
- Engineering(all)