Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization

Lan Zhang, Yang Ju*, Atsushi Hosoi, Akifumi Fujimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

We introduce a new type of microscopy which is capable of investigating surface topography and electrical property of conductive and dielectric materials simultaneously on a nanometer scale. The microwave atomic force microscopy is a combination of the principles of the scanning probe microscope and the microwave-measurement technique. As a result, under the noncontact AFM working conditions, we successfully generated a microwave image of a 200-nm Au film coating on a glass wafer substrate with a spatial resolution of 120 nm and a measured voltage difference of 19.2 mV between the two materials.

Original languageEnglish
Article number123708
JournalReview of Scientific Instruments
Volume81
Issue number12
DOIs
Publication statusPublished - 2010 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Instrumentation

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