TY - JOUR
T1 - Microwave diamond devices technology
T2 - Field-effect transistors and modeling
AU - Chen, Zhihao
AU - Fu, Yu
AU - Kawarada, Hiroshi
AU - Xu, Yuehang
N1 - Funding Information:
National Natural Science Foundation of China, Grant/Award Number: 61922021 Funding information
Publisher Copyright:
© 2020 John Wiley & Sons Ltd
PY - 2021/1/1
Y1 - 2021/1/1
N2 - This paper provides an overview of the developments in microwave diamond field-effect transistor (D-FET) technologies. Due to the ultrawide-bandgap and high carrier velocity and thermal conductivity of diamond, it is a potential candidate for microwave power devices with high output power and operating frequency. Here, the properties of semiconductor materials for microwave applications are described. Then, the mechanisms of various diamond FETs are detailed. In recent years, hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors (HD MOSFETs) have been widely studied for their potential use in microwave power devices. Therefore, the structures and developments of HD MOSFETs are mainly discussed. Finally, in the prospective application of the HD FET microwave circuit, the state-of-the-art large-signal modeling of HD MOSFETs is presented.
AB - This paper provides an overview of the developments in microwave diamond field-effect transistor (D-FET) technologies. Due to the ultrawide-bandgap and high carrier velocity and thermal conductivity of diamond, it is a potential candidate for microwave power devices with high output power and operating frequency. Here, the properties of semiconductor materials for microwave applications are described. Then, the mechanisms of various diamond FETs are detailed. In recent years, hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors (HD MOSFETs) have been widely studied for their potential use in microwave power devices. Therefore, the structures and developments of HD MOSFETs are mainly discussed. Finally, in the prospective application of the HD FET microwave circuit, the state-of-the-art large-signal modeling of HD MOSFETs is presented.
KW - diamond FETs
KW - hydrogen-terminated diamond (HD)
KW - microwave
KW - modeling
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U2 - 10.1002/jnm.2800
DO - 10.1002/jnm.2800
M3 - Article
AN - SCOPUS:85089860493
SN - 0894-3370
VL - 34
JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
IS - 1
M1 - e2800
ER -