Microwave diamond devices technology: Field-effect transistors and modeling

Zhihao Chen, Yu Fu, Hiroshi Kawarada, Yuehang Xu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


This paper provides an overview of the developments in microwave diamond field-effect transistor (D-FET) technologies. Due to the ultrawide-bandgap and high carrier velocity and thermal conductivity of diamond, it is a potential candidate for microwave power devices with high output power and operating frequency. Here, the properties of semiconductor materials for microwave applications are described. Then, the mechanisms of various diamond FETs are detailed. In recent years, hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors (HD MOSFETs) have been widely studied for their potential use in microwave power devices. Therefore, the structures and developments of HD MOSFETs are mainly discussed. Finally, in the prospective application of the HD FET microwave circuit, the state-of-the-art large-signal modeling of HD MOSFETs is presented.

Original languageEnglish
Article numbere2800
JournalInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Issue number1
Publication statusPublished - 2021 Jan 1


  • diamond FETs
  • hydrogen-terminated diamond (HD)
  • microwave
  • modeling

ASJC Scopus subject areas

  • Modelling and Simulation
  • Computer Science Applications
  • Electrical and Electronic Engineering


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