Abstract
The change of the Gibbs energy of the reaction between group IIIA and VA elements to form a liquid III-V alloy was derived for the Ga-As, In-As, Ga-P and In-P systems by combining the heat content of the alloy with the heat and entropy of formation of the equiatomic compound at a reference temperature. The obtained data were analysed by using a Redlich-Kister polynomial equation and the optimized parameters were derived for a temperature range between 873 and 1523 K and a composition range between xv = 0 and 0.5 (for the Ga-P system between xp = 0 and 0.1). The partial pressures of these liquid alloys were expressed as a function of alloy composition and temperature. Partial pressure and total pressure-composition-temperature diagrams were constructed.
Translated title of the contribution | Free Energy of Mixing and Vapour Pressure of Liquid Ga-As, In-As, Ga-P and In-P Alloys |
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Original language | German |
Pages (from-to) | 279-285 |
Number of pages | 7 |
Journal | International Journal of Materials Research |
Volume | 89 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1998 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Metals and Alloys
- Materials Chemistry