Misfit stress relaxation mechanism in GeO2/Ge systems: A classical molecular simulation study

T. Watanabe; T. Onda; I. Ohdomari

doi:10.1149/1.3487621

Misfit stress relaxation mechanism in GeO₂/Ge systems: A classical molecular simulation study

T. Watanabe^*, T. Onda, I. Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

The stress relaxation mechanism at the GeO₂/Ge interface is studied by means of classical molecular simulation employing empirical force-fields. In general, the chemistry in GeO₂ is characterized by weaker bonds and softer bond angles than that in SiO₂, which has been considered to lead to the relaxation of the GeO₂ film on Ge substrate. However, Ge-O-Ge angle is suffer than Si-O-Si angle, and has a narrower equilibrium angle of 133° than that of Si-O-Si of 144°. The present simulation results show that the narrow Ge-O-Ge bond contribute the reduction of the compressive stress in the GeO₂ films. If the Ge-O-Ge bond angle had the same equilibrium angle with Si-O-Si angle, a higher residual stress would remain in the GeO₂ films.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 4
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	901-912
Number of pages	12
Edition	6
ISBN (Electronic)	9781607681755
ISBN (Print)	9781566778251
DOIs	https://doi.org/10.1149/1.3487621
Publication status	Published - 2010

Publication series

Name	ECS Transactions
Number	6
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3487621

Cite this

Misfit stress relaxation mechanism in GeO₂/Ge systems: A classical molecular simulation study. / Watanabe, T.; Onda, T.; Ohdomari, I.
SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6. ed. Electrochemical Society Inc., 2010. p. 901-912 (ECS Transactions; Vol. 33, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{452625ff45cc4ca99e630f8154a2a70c,

title = "Misfit stress relaxation mechanism in GeO2/Ge systems: A classical molecular simulation study",

abstract = "The stress relaxation mechanism at the GeO2/Ge interface is studied by means of classical molecular simulation employing empirical force-fields. In general, the chemistry in GeO2 is characterized by weaker bonds and softer bond angles than that in SiO2, which has been considered to lead to the relaxation of the GeO2 film on Ge substrate. However, Ge-O-Ge angle is suffer than Si-O-Si angle, and has a narrower equilibrium angle of 133° than that of Si-O-Si of 144°. The present simulation results show that the narrow Ge-O-Ge bond contribute the reduction of the compressive stress in the GeO2 films. If the Ge-O-Ge bond angle had the same equilibrium angle with Si-O-Si angle, a higher residual stress would remain in the GeO2 films.",

author = "T. Watanabe and T. Onda and I. Ohdomari",

year = "2010",

doi = "10.1149/1.3487621",

language = "English",

isbn = "9781566778251",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "901--912",

booktitle = "SiGe, Ge, and Related Compounds 4",

edition = "6",

}

TY - GEN

T1 - Misfit stress relaxation mechanism in GeO2/Ge systems

T2 - A classical molecular simulation study

AU - Watanabe, T.

AU - Onda, T.

AU - Ohdomari, I.

PY - 2010

Y1 - 2010

N2 - The stress relaxation mechanism at the GeO2/Ge interface is studied by means of classical molecular simulation employing empirical force-fields. In general, the chemistry in GeO2 is characterized by weaker bonds and softer bond angles than that in SiO2, which has been considered to lead to the relaxation of the GeO2 film on Ge substrate. However, Ge-O-Ge angle is suffer than Si-O-Si angle, and has a narrower equilibrium angle of 133° than that of Si-O-Si of 144°. The present simulation results show that the narrow Ge-O-Ge bond contribute the reduction of the compressive stress in the GeO2 films. If the Ge-O-Ge bond angle had the same equilibrium angle with Si-O-Si angle, a higher residual stress would remain in the GeO2 films.

AB - The stress relaxation mechanism at the GeO2/Ge interface is studied by means of classical molecular simulation employing empirical force-fields. In general, the chemistry in GeO2 is characterized by weaker bonds and softer bond angles than that in SiO2, which has been considered to lead to the relaxation of the GeO2 film on Ge substrate. However, Ge-O-Ge angle is suffer than Si-O-Si angle, and has a narrower equilibrium angle of 133° than that of Si-O-Si of 144°. The present simulation results show that the narrow Ge-O-Ge bond contribute the reduction of the compressive stress in the GeO2 films. If the Ge-O-Ge bond angle had the same equilibrium angle with Si-O-Si angle, a higher residual stress would remain in the GeO2 films.

UR - http://www.scopus.com/inward/record.url?scp=79952673013&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952673013&partnerID=8YFLogxK

U2 - 10.1149/1.3487621

DO - 10.1149/1.3487621

M3 - Conference contribution

AN - SCOPUS:79952673013

SN - 9781566778251

T3 - ECS Transactions

SP - 901

EP - 912

BT - SiGe, Ge, and Related Compounds 4

PB - Electrochemical Society Inc.

ER -