Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization

H. Gotoh; T. Tawara; Y. Kobayashi; N. Kobayashi; Y. Yamauchi; T. Makimoto; T. Saitoh

doi:10.1002/pssc.200565166

Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization

H. Gotoh^*, T. Tawara, Y. Kobayashi, N. Kobayashi, Y. Yamauchi, T. Makimoto, T. Saitoh

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.

Original language	English
Pages (from-to)	1974-1977
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565166
Publication status	Published - 2006
Externally published	Yes
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sept 2

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200565166

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title = "Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization",

abstract = "Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.",

author = "H. Gotoh and T. Tawara and Y. Kobayashi and N. Kobayashi and Y. Yamauchi and T. Makimoto and T. Saitoh",

year = "2006",

doi = "10.1002/pssc.200565166",

language = "English",

volume = "3",

pages = "1974--1977",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization

AU - Gotoh, H.

AU - Tawara, T.

AU - Kobayashi, Y.

AU - Kobayashi, N.

AU - Yamauchi, Y.

AU - Makimoto, T.

AU - Saitoh, T.

PY - 2006

Y1 - 2006

N2 - Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.

AB - Piezoelectric effects on PL properties are clarified in InGaN quantum wells (QWs) of 1-10 nm wide at 17 K. An extremely large change in PL peak energy (up to 200 meV) and PL decay time (two orders of magnitude) are found in a 10 nm-wide QW with increasing excitation intensity. We compare the distinctive characteristics of the field effects with QCSE in GaAs QWs and discuss possible optical device functions.

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U2 - 10.1002/pssc.200565166

DO - 10.1002/pssc.200565166

M3 - Conference article

AN - SCOPUS:33746331044

SN - 1862-6351

VL - 3

SP - 1974

EP - 1977

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization

Abstract

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