Abstract
Molecular beam epitaxy of GaAs was tried using a high vacuum system with effusion cells and a quadrupole mass spectrometer, and the epitaxial process was studied in situ by high energy electron diffraction. Analysis of the quality of the GaAs film was made with a scanning electron microscope, an ion microprobe analyser and an ESCA photoelectron spectrometer. Photoluminescence measurements were made to investigate the radiative recombination characteristics of the GaAs film. It is found from these measurements that the GaAs film grown by molecular beam epitaxy has nearly the same quality as bulk crystals.
| Original language | English |
|---|---|
| Title of host publication | Bull Electrotech Lab, Tokyo |
| Pages | 361-369 |
| Number of pages | 9 |
| Volume | 39 |
| Edition | 5 |
| Publication status | Published - 1975 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)