Abstract
InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240 degree C and temperatures of In and P cells were 840 similar 880 degree C and 370 similar 400 degree C, respectively. Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.
| Original language | English |
|---|---|
| Title of host publication | Jpn J Appl Phys |
| Pages | 2321-2325 |
| Number of pages | 5 |
| Volume | 15 |
| Edition | 12 |
| Publication status | Published - 1976 Dec |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)