Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors

Masaaki Enami*, Kazuaki Tsutsumi, Fumiaki Hirose, Shohei Katsuta, Masakazu Kobayashi

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

12 Citations (Scopus)


Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.

Original languageEnglish
Pages (from-to)L1047-L1049
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number9 AB
Publication statusPublished - 2003 Sept 15


  • Molecular beam epitaxy
  • Photoluminescence
  • Spectral response
  • UV-A detector
  • ZnMgCdS

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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