Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire

Taizo Nakasu; Masakazu Kobayashi; Toshiaki Asahi; Hiroyoshi Togo

doi:10.7567/JJAP.53.015502

Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire

Taizo Nakasu^*, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

ZnTe epilayers were grown on transparent (10̄10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallographic properties was investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that strongest (211)- and (100)-oriented ZnTe epilayers were formed on m-sapphire when a ZnTe buffer layer annealed at 340 ° for 5-min was inserted. Also, it was confirmed that only (211) ZnTe epilayers were formed on the 2° tilted m-plane sapphire substrate. Thus, the single domain (211) ZnTe epilayer can be grown on the m-plane sapphire using MBE.

Original language	English
Article number	015502
Journal	Japanese journal of applied physics
Volume	53
Issue number	1
DOIs	https://doi.org/10.7567/JJAP.53.015502
Publication status	Published - 2014 Jan

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.53.015502

Cite this

@article{5cfbc008e1a14079bfd88b5cf00f5fa6,

title = "Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire",

abstract = "ZnTe epilayers were grown on transparent (1{\=0}10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallographic properties was investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that strongest (211)- and (100)-oriented ZnTe epilayers were formed on m-sapphire when a ZnTe buffer layer annealed at 340 ° for 5-min was inserted. Also, it was confirmed that only (211) ZnTe epilayers were formed on the 2° tilted m-plane sapphire substrate. Thus, the single domain (211) ZnTe epilayer can be grown on the m-plane sapphire using MBE.",

author = "Taizo Nakasu and Masakazu Kobayashi and Toshiaki Asahi and Hiroyoshi Togo",

year = "2014",

month = jan,

doi = "10.7567/JJAP.53.015502",

language = "English",

volume = "53",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire

AU - Nakasu, Taizo

AU - Kobayashi, Masakazu

AU - Asahi, Toshiaki

AU - Togo, Hiroyoshi

PY - 2014/1

Y1 - 2014/1

N2 - ZnTe epilayers were grown on transparent (10̄10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallographic properties was investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that strongest (211)- and (100)-oriented ZnTe epilayers were formed on m-sapphire when a ZnTe buffer layer annealed at 340 ° for 5-min was inserted. Also, it was confirmed that only (211) ZnTe epilayers were formed on the 2° tilted m-plane sapphire substrate. Thus, the single domain (211) ZnTe epilayer can be grown on the m-plane sapphire using MBE.

AB - ZnTe epilayers were grown on transparent (10̄10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallographic properties was investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that strongest (211)- and (100)-oriented ZnTe epilayers were formed on m-sapphire when a ZnTe buffer layer annealed at 340 ° for 5-min was inserted. Also, it was confirmed that only (211) ZnTe epilayers were formed on the 2° tilted m-plane sapphire substrate. Thus, the single domain (211) ZnTe epilayer can be grown on the m-plane sapphire using MBE.

UR - http://www.scopus.com/inward/record.url?scp=84892399230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892399230&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.015502

DO - 10.7567/JJAP.53.015502

M3 - Article

AN - SCOPUS:84892399230

SN - 0021-4922

VL - 53

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 1

M1 - 015502

ER -

Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this