Molecular beam epitaxy growth of ZnTe epilayers on c-plane sapphire

Taizo Nakasu*, Yuki Kumagai, Kimihiro Nishimura, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


ZnTe epilayers were grown on transparent substrates by molecular beam epitaxy. The insertion of a low-temperature buffer layer was carried out, and the influence of the buffer layer thickness and its annealing on the crystallographic property were investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that the (111) ZnTe epilayer with the decreased number of domains could be formed on c-sapphire when a 3.5-nm-thick annealed ZnTe buffer layer was inserted. It was shown that the XRD pole figure imaging was a useful means of analyzing domain distributions in the film.

Original languageEnglish
Article number095502
JournalApplied Physics Express
Issue number9
Publication statusPublished - 2012 Sept

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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