Molecular beam epitaxy of gap and GaAs1−xPx

Yuichi Matsushima; Shunichi Gonda

doi:10.1143/JJAP.15.2093

Molecular beam epitaxy of gap and GaAs_1−xP_x

Yuichi Matsushima, Shunichi Gonda

Research output: Contribution to journal › Article › peer-review

Abstract

GaP and GaAs_1−xP_x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs_1−xP_x is dependent on the substrate temperature, T_s, and the intensity ratio P/As. The rate of decrease,-dx/dT_s, is found to be 0.003 °C⁻¹ for the entire composition-ratio range.

Original language	English
Pages (from-to)	2093-2101
Number of pages	9
Journal	Japanese Journal of Applied Physics
Volume	15
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.15.2093
Publication status	Published - 1976
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Molecular beam epitaxy of gap and GaAs1−xPx",

abstract = "GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.",

author = "Yuichi Matsushima and Shunichi Gonda",

year = "1976",

doi = "10.1143/JJAP.15.2093",

language = "English",

volume = "15",

pages = "2093--2101",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - Molecular beam epitaxy of gap and GaAs1−xPx

AU - Matsushima, Yuichi

AU - Gonda, Shunichi

PY - 1976

Y1 - 1976

N2 - GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.

AB - GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.

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DO - 10.1143/JJAP.15.2093

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

ER -

Molecular beam epitaxy of gap and GaAs_1−xP_x

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