Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

D. L. Mathine; S. M. Durbin; R. L. Gunshor; M. Kobayashi; D. R. Menke; J. Gonsalves; N. Otsuka; Q. Fu; M. Hagerott; A. V. Nurmikko

doi:10.1016/0039-6028(90)90324-2

Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

D. L. Mathine^*, S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, A. V. Nurmikko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

Original language	English
Pages (from-to)	344-346
Number of pages	3
Journal	Surface Science
Volume	228
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90324-2
Publication status	Published - 1990 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(90)90324-2

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@article{4f4b59fd321040b4928174e47525b8bd,

title = "Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb",

abstract = "The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.",

author = "Mathine, {D. L.} and Durbin, {S. M.} and Gunshor, {R. L.} and M. Kobayashi and Menke, {D. R.} and J. Gonsalves and N. Otsuka and Q. Fu and M. Hagerott and Nurmikko, {A. V.}",

note = "Funding Information: The authors would like to acknowledge L.A. Kolodziejski for contributions to the growth of ZnTe, and thank Z. Pei, R. Venkatasubramanian, D. Lubelski, Y.R. Lee, and A.K. Ramdas for their participation in this project. Research support was provided by DARPA/ONR URI contract N00014-86-K0760, AFOSR grant AFOSR-8% 0185. National Science Foundation (NSF)-MRG Grant DMR-8520866, and NSF Equipment grant ECS-8606241.",

year = "1990",

month = apr,

day = "1",

doi = "10.1016/0039-6028(90)90324-2",

language = "English",

volume = "228",

pages = "344--346",

journal = "Surface Science",

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TY - JOUR

T1 - Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

AU - Mathine, D. L.

AU - Durbin, S. M.

AU - Gunshor, R. L.

AU - Kobayashi, M.

AU - Menke, D. R.

AU - Gonsalves, J.

AU - Otsuka, N.

AU - Fu, Q.

AU - Hagerott, M.

AU - Nurmikko, A. V.

N1 - Funding Information: The authors would like to acknowledge L.A. Kolodziejski for contributions to the growth of ZnTe, and thank Z. Pei, R. Venkatasubramanian, D. Lubelski, Y.R. Lee, and A.K. Ramdas for their participation in this project. Research support was provided by DARPA/ONR URI contract N00014-86-K0760, AFOSR grant AFOSR-8% 0185. National Science Foundation (NSF)-MRG Grant DMR-8520866, and NSF Equipment grant ECS-8606241.

PY - 1990/4/1

Y1 - 1990/4/1

N2 - The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

AB - The difficulty in achieving the amphoteric doping of wide gap II-VI semiconductors for use in light emitting devices suggests the merits of heterojunction injection. This paper discusses the first epilayer/epilayer ZnTe/AlSb/GaSb heterojunctions grown by MBE. Pseudomorphic ZnTe layers were nucleated on pseudomorphic AlSb layers; the AlSb was grown on homoepitaxial GaSb buffer layers. Free exciton related features were observed in the photoluminescence of ZnTe; dominant features of the PL corresponded to near band-edge transitions. Microstructural quality was examined using TEM and X-ray rocking curves. Cross-sectional TEM images reveal atomically flat interfaces. X-ray rocking curve full width at half maximum values were close to the theoretically expected broadening due to the finite layer thickness.

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U2 - 10.1016/0039-6028(90)90324-2

DO - 10.1016/0039-6028(90)90324-2

M3 - Article

AN - SCOPUS:33747222687

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VL - 228

SP - 344

EP - 346

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

Abstract

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