TY - JOUR
T1 - Molecular beam epitaxy of stoichiometric tin–telluride thin films
AU - Tsuboi, Kaito
AU - Su, Nan
AU - Kobayashi, Shotaro
AU - Sugimoto, Kota
AU - Kobayashi, Masakazu
N1 - Funding Information:
This work was supported in part by a Waseda University Grant for Special Research Projects. The experiment was in part performed at the Joint Research Center for Environmentally Conscious Technologies in Materials Science (Grant No. JPMXP0618217637, JPMXP0621467974) at ZAIKEN, Waseda University. The authors thank S. Enomoto and co-workers at Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, for the TEM observation. We thank Ian McNaught, PhD, from Edanz for editing a draft of this manuscript.
Funding Information:
This work was supported in part by a Waseda University Grant for Special Research Projects. The experiment was in part performed at the Joint Research Center for Environmentally Conscious Technologies in Materials Science (Grant No. JPMXP0618217637, JPMXP0621467974) at ZAIKEN, Waseda University. The authors thank S. Enomoto and co-workers at Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, for the TEM observation.
Publisher Copyright:
© 2022
PY - 2022/11/1
Y1 - 2022/11/1
N2 - Tin–telluride (SnTe) thin films were grown on (0 0 1)-oriented GaAs substrates using molecular beam epitaxy. Samples were grown with various molecular beam intensity ratios at substrate temperatures of 225 °C and 240 °C. The crystallinity of the SnTe thin films was studied using X-ray diffraction θ–2θ measurements. Stoichiometric SnTe layers were achieved by tuning both molecular beam intensity ratio and substrate temperature. It was also found that the excess Te remained in films when the molecular beam intensity ratio was Te rich. The (1 1 1)-oriented domain was confirmed when the substrate temperature was 240 °C. Continuous film formation was confirmed from cross-sectional transmission electron microscopy (TEM) observation. The segregation of Te for certain samples were also confirmed from the TEM energy dispersive x-ray mapping.
AB - Tin–telluride (SnTe) thin films were grown on (0 0 1)-oriented GaAs substrates using molecular beam epitaxy. Samples were grown with various molecular beam intensity ratios at substrate temperatures of 225 °C and 240 °C. The crystallinity of the SnTe thin films was studied using X-ray diffraction θ–2θ measurements. Stoichiometric SnTe layers were achieved by tuning both molecular beam intensity ratio and substrate temperature. It was also found that the excess Te remained in films when the molecular beam intensity ratio was Te rich. The (1 1 1)-oriented domain was confirmed when the substrate temperature was 240 °C. Continuous film formation was confirmed from cross-sectional transmission electron microscopy (TEM) observation. The segregation of Te for certain samples were also confirmed from the TEM energy dispersive x-ray mapping.
KW - A1. Interfaces
KW - A1. X-ray diffraction
KW - A1. transmission electron microscopy
KW - A3. Molecular beam epitaxy
KW - B1. Tellurides
KW - B2. Topological crystalline insulators
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U2 - 10.1016/j.jcrysgro.2022.126805
DO - 10.1016/j.jcrysgro.2022.126805
M3 - Article
AN - SCOPUS:85137266466
SN - 0022-0248
VL - 597
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 126805
ER -